Multilayer silicon nanocapacitor with improved dielectric layers (2017-2020)

 Multilayer silicon nanocapacitor with improved dielectric layers (2017-2020)

Funding: ERAF 1.1.1.1/16/A/203

 

Main partner: Riga Technical University

Cooperation partners:

  • Riga’s Semiconductor fabrication plant “ALFA RPAR”
  • University of Latvia

Project costs: EUR 648605.05, including EUR 551314.29 contribution from ERDF

Project duration: 01.03.2017- 29.02.2020

Project coordinator: Professor, Dr.habil.phys. Yuri Dekhtyar

Contacts of cooperation partners:

Aleksandrs Zaslavskis, Technical Director of New Product Development of “ALFA RPAR”

Dr.Chem. Gunta Ķizāne, Senior Researcher, Institute of Chemical Physics of University of Latvia

Administrative supervisor: Marija Nikipelova, Project supervisor of Riga Technical University

Short description: Nanocapacitors (NC) are widely used in micro and nanodevices. NC manufacturing market is developing rapidly and will maintain its rate of development for at least the next 10 years. Latvian manufacturers have potential to enter NC manufacturing market, but it is not being done so far. In order to compete, NC production costs must be lower than those currently existing. Silicon-based technologies are widely used for NC manufacturing. NC dielectric layer is often made as a stacked film of Si3N4 (N) nanolayers surrounded by SiO2 (O) from both sides: ON…NO layer. Several technological reactors are required to deposit N…N layer. NC production costs can be reduced if N…N layer is deposited in one reactor. In addition, NCs have to be thermally stable and resistant to ionizing radiation.

Aim of the project is to develop innovative manufacturing technology of NC dielectric layers that reduces NC production costs and as the result enhances innovation capacity, competitiveness of Latvian economy and promotes its sustainable growth.

Planned main results:

  1. Dissemination of the results in scientific publications, at conferences, seminars
  2. Laboratory-scale prototype of NC manufacturing technology
  3. Patent application for deposition method of N…N dielectric layer

 

 

Published on March 10, 2017.

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